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IPI60R385CP Технические параметры

Infineon  IPI60R385CP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Package / Case TO-262-3
Mounting Type Through Hole
Surface Mount NO
Supplier Device Package PG-TO262-3-1
Number of Terminals 3Terminals
Transistor Element Material SILICON
Continuous Drain Current Id 9
Vds - Drain-Source Breakdown Voltage 650 V
Typical Turn-On Delay Time 10 ns
Vgs th - Gate-Source Threshold Voltage 3.5 V
Pd - Power Dissipation 83 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.084199 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 500
Mounting Styles Through Hole
Channel Mode Enhancement
Part # Aliases SP000103250 IPI6R385CPXK IPI60R385CPXKSA1
Manufacturer Infineon
Brand Infineon Technologies
Qg - Gate Charge 17 nC
Tradename CoolMOS
Rds On - Drain-Source Resistance 385 mOhms
RoHS Details
Typical Turn-Off Delay Time 40 ns
Id - Continuous Drain Current 9 A
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Infineon Technologies
Power Dissipation (Max) 83W (Tc)
Product Status Active
Package Description GREEN, PLASTIC, TO-262, 3 PIN
Package Style IN-LINE
Moisture Sensitivity Levels NOT SPECIFIED
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 40
Rohs Code Yes
Manufacturer Part Number IPI60R385CP
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Свойство продукта Значение свойства
Risk Rank 5.38
Part Package Code TO-262AA
Drain Current-Max (ID) 9 A
Series CoolMOS CP
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
JESD-609 Code e3
Pbfree Code Yes
Terminal Finish MATTE TIN
Subcategory MOSFETs
Technology Si
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Configuration Single
Number of Channels 1 ChannelChannel
Operating Mode ENHANCEMENT MODE
Power Dissipation 83
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340µA
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Rise Time 5 ns
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
Product Type MOSFET
Transistor Type 1 N-Channel
JEDEC-95 Code TO-262AA
Drain-source On Resistance-Max 0.385 Ω
Pulsed Drain Current-Max (IDM) 27 A
DS Breakdown Voltage-Min 600 V
Channel Type N
Avalanche Energy Rating (Eas) 227 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -
Product Category MOSFET
Width 4.5 mm
Height 9.45 mm
Length 10.2 mm
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IPI60R385CP Документы

  • Datasheets
IPI60R385CP brand manufacturers: Infineon, Anli stock, IPI60R385CP reference price.Infineon. IPI60R385CP parameters, IPI60R385CP Datasheet PDF and pin diagram description download.You can use the IPI60R385CP Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPI60R385CP pin diagram and circuit diagram and usage method of function,IPI60R385CP electronics tutorials.You can download from the Anli.