Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IPI60R520CP Технические параметры
Infineon IPI60R520CP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Turn Off Delay Time | 74 ns | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IPI60R520CP | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Samacsys Description | INFINEON - IPI60R520CP - MOSFET, N, TO-262 | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.82 | |
| Part Package Code | TO-262AA | |
| Drain Current-Max (ID) | 6.8 A | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Termination | Through Hole | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Subcategory | FET General Purpose Power | |
| Max Power Dissipation | 66 W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 66 W | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Rise Time | 12 ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 6.8 A | |
| JEDEC-95 Code | TO-262AA | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 6.8 A | |
| Drain-source On Resistance-Max | 0.52 Ω | |
| Drain to Source Breakdown Voltage | 600 V | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Dual Supply Voltage | 650 V | |
| Input Capacitance | 630 pF | |
| DS Breakdown Voltage-Min | 600 V | |
| Avalanche Energy Rating (Eas) | 166 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 66 W | |
| Drain to Source Resistance | 520 mΩ | |
| Rds On Max | 520 mΩ | |
| Nominal Vgs | 3 V | |
| REACH SVHC | No SVHC |
IPI60R520CP Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ