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IPI80N04S3-03 Технические параметры

Infineon  IPI80N04S3-03 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package PG-TO262-3-1
Continuous Drain Current Id 80
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Infineon Technologies
Power Dissipation (Max) 188W (Tc)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Свойство продукта Значение свойства
Series *
Technology MOSFET (Metal Oxide)
Power Dissipation 188
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 120µA
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Vgs (Max) ±20V
Channel Type N
FET Feature -
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IPI80N04S3-03 Документы

  • Datasheets
IPI80N04S3-03 brand manufacturers: Infineon, Anli stock, IPI80N04S3-03 reference price.Infineon. IPI80N04S3-03 parameters, IPI80N04S3-03 Datasheet PDF and pin diagram description download.You can use the IPI80N04S3-03 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPI80N04S3-03 pin diagram and circuit diagram and usage method of function,IPI80N04S3-03 electronics tutorials.You can download from the Anli.