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IPI90R1K0C3 Технические параметры

Infineon  IPI90R1K0C3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Number of Pins 3Pins
Supplier Device Package PG-TO262-3
RoHS Compliant
Turn Off Delay Time 400 ns
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Infineon Technologies
Power Dissipation (Max) 89W (Tc)
Product Status Obsolete
Operating Temperature -55°C ~ 150°C (TJ)
Series CoolMOS™
Termination Through Hole
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 89 W
Technology MOSFET (Metal Oxide)
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 89 W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370µA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 100 V
Rise Time 20 ns
Drain to Source Voltage (Vdss) 900 V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5.7 A
Gate to Source Voltage (Vgs) 20 V
Drain to Source Breakdown Voltage 900 V
Dual Supply Voltage 900 V
Input Capacitance 850 pF
FET Feature -
Drain to Source Resistance 1 Ω
Rds On Max 1 Ω
Nominal Vgs 3 V
REACH SVHC No SVHC
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IPI90R1K0C3 Документы

  • Datasheets
IPI90R1K0C3 brand manufacturers: Infineon, Anli stock, IPI90R1K0C3 reference price.Infineon. IPI90R1K0C3 parameters, IPI90R1K0C3 Datasheet PDF and pin diagram description download.You can use the IPI90R1K0C3 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPI90R1K0C3 pin diagram and circuit diagram and usage method of function,IPI90R1K0C3 electronics tutorials.You can download from the Anli.