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IPP070N08N3GXKSA1 Технические параметры

Infineon  IPP070N08N3GXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Number of Elements 1 Element
RoHS Compliant
Turn Off Delay Time 31 ns
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 136W (Tc)
Product Status Active
Packaging Rail/Tube
Operating Temperature -55°C ~ 175°C (TJ)
Series OptiMOS™ 3
Свойство продукта Значение свойства
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Technology MOSFET (Metal Oxide)
Power Dissipation 136 W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7mOhm @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 73µA
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Rise Time 66 ns
Drain to Source Voltage (Vdss) 80 V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80 A
Gate to Source Voltage (Vgs) 20 V
FET Feature -
Radiation Hardening No
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IPP070N08N3GXKSA1 Документы

  • Datasheets
IPP070N08N3GXKSA1 brand manufacturers: Infineon, Anli stock, IPP070N08N3GXKSA1 reference price.Infineon. IPP070N08N3GXKSA1 parameters, IPP070N08N3GXKSA1 Datasheet PDF and pin diagram description download.You can use the IPP070N08N3GXKSA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPP070N08N3GXKSA1 pin diagram and circuit diagram and usage method of function,IPP070N08N3GXKSA1 electronics tutorials.You can download from the Anli.