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IPP072N10N3GXK Технические параметры

Infineon  IPP072N10N3GXK technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Package / Case TO-220-3
Continuous Drain Current Id 80
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-On Delay Time 19 ns
Vgs th - Gate-Source Threshold Voltage 2 V
Pd - Power Dissipation 150 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.068784 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 500
Mounting Styles Through Hole
Forward Transconductance - Min 50 S
Channel Mode Enhancement
Part # Aliases SP000680830 G IPP072N10N3 IPP072N10N3GXKSA1
Manufacturer Infineon
Свойство продукта Значение свойства
Brand Infineon Technologies
Qg - Gate Charge 68 nC
Rds On - Drain-Source Resistance 6.2 mOhms
RoHS Details
Typical Turn-Off Delay Time 37 ns
Id - Continuous Drain Current 80 A
Packaging Tube
Subcategory MOSFETs
Technology Si
Configuration Single
Number of Channels 1 ChannelChannel
Rise Time 37 ns
Product Type MOSFET
Transistor Type 1 N-Channel
Channel Type N
Product Category MOSFET
Width 4.4 mm
Height 15.65 mm
Length 10 mm
Просмотр сходства

IPP072N10N3GXK Документы

  • Datasheets
IPP072N10N3GXK brand manufacturers: Infineon, Anli stock, IPP072N10N3GXK reference price.Infineon. IPP072N10N3GXK parameters, IPP072N10N3GXK Datasheet PDF and pin diagram description download.You can use the IPP072N10N3GXK Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPP072N10N3GXK pin diagram and circuit diagram and usage method of function,IPP072N10N3GXK electronics tutorials.You can download from the Anli.