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IPP114N03LGHKSA1 Технические параметры

Infineon  IPP114N03LGHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Continuous Drain Current Id 30
Number of Elements 1 Element
RoHS Compliant
Turn Off Delay Time 15 ns
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 38W (Tc)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Series OptiMOS™ 3
Свойство продукта Значение свойства
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Technology MOSFET (Metal Oxide)
Power Dissipation 38
Turn On Delay Time 3.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Rise Time 3 ns
Drain to Source Voltage (Vdss) 30 V
Vgs (Max) ±20V
Continuous Drain Current (ID) 30 A
Gate to Source Voltage (Vgs) 20 V
Channel Type N
FET Feature -
Radiation Hardening No
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IPP114N03LGHKSA1 Документы

  • Datasheets
IPP114N03LGHKSA1 brand manufacturers: Infineon, Anli stock, IPP114N03LGHKSA1 reference price.Infineon. IPP114N03LGHKSA1 parameters, IPP114N03LGHKSA1 Datasheet PDF and pin diagram description download.You can use the IPP114N03LGHKSA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPP114N03LGHKSA1 pin diagram and circuit diagram and usage method of function,IPP114N03LGHKSA1 electronics tutorials.You can download from the Anli.