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IPS65R950C6 Технические параметры

Infineon  IPS65R950C6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Package / Case TO-251-3
Mounting Type Through Hole
Supplier Device Package PG-TO251
Continuous Drain Current 4.5(A)
Drain-Source On-Volt 700(V)
Operating Temperature Classification Military
Package Type TO-251
Operating Temp Range -55C to 150C
Gate-Source Voltage (Max) 20(V)
Channel Mode Enhancement
Number of Elements 1 Element
Rad Hardened No
Mounting Through Hole
Vds - Drain-Source Breakdown Voltage 650 V
Typical Turn-On Delay Time 6.6 ns
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 37 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.011993 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 1500
Mounting Styles Through Hole
Part # Aliases SP000991122 IPS65R950C6AKMA1
Manufacturer Infineon
Brand Infineon Technologies
Qg - Gate Charge 15.3 nC
Tradename CoolMOS
Rds On - Drain-Source Resistance 855 mOhms
RoHS Details
Typical Turn-Off Delay Time 41 ns
Свойство продукта Значение свойства
Id - Continuous Drain Current 4.5 A
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Infineon Technologies
Power Dissipation (Max) 37W (Tc)
Product Status Active
Packaging Rail/Tube
Series CoolMOS C6
Operating Temperature -55°C ~ 150°C (TJ)
Type Power MOSFET
Subcategory MOSFETs
Technology Si
Pin Count 3 +Tab
Polarity N
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 37(W)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Input Capacitance (Ciss) (Max) @ Vds 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Rise Time 5.2 ns
Drain to Source Voltage (Vdss) 650 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Width 2.38 mm
Height 6.22 mm
Length 6.73 mm
Просмотр сходства

IPS65R950C6 Документы

  • Datasheets
IPS65R950C6 brand manufacturers: Infineon, Anli stock, IPS65R950C6 reference price.Infineon. IPS65R950C6 parameters, IPS65R950C6 Datasheet PDF and pin diagram description download.You can use the IPS65R950C6 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPS65R950C6 pin diagram and circuit diagram and usage method of function,IPS65R950C6 electronics tutorials.You can download from the Anli.