Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IPU50R950CE Технические параметры
Infineon IPU50R950CE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Package / Case | TO-251-3 | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO251-3 | |
| Continuous Drain Current Id | 6.6 | |
| Continuous Drain Current | 4.3(A) | |
| Drain-Source On-Volt | 500(V) | |
| Operating Temperature Classification | Military | |
| Package Type | TO-251 | |
| Operating Temp Range | -55C to 150C | |
| Gate-Source Voltage (Max) | 20(V) | |
| Channel Mode | Enhancement | |
| Number of Elements | 1 Element | |
| Rad Hardened | No | |
| Mounting | Through Hole | |
| Vds - Drain-Source Breakdown Voltage | 500 V | |
| Typical Turn-On Delay Time | 7 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Pd - Power Dissipation | 53 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Unit Weight | 0.011993 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 1500 | |
| Mounting Styles | Through Hole | |
| Part # Aliases | SP001022956 IPU50R950CEBKMA1 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| Qg - Gate Charge | 10.5 nC | |
| Tradename | CoolMOS | |
| Rds On - Drain-Source Resistance | 860 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 25 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Id - Continuous Drain Current | 6.6 A | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 6.6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 13V | |
| Mfr | Infineon Technologies | |
| Power Dissipation (Max) | 53W (Tc) | |
| Product Status | Active | |
| Packaging | Rail/Tube | |
| Series | CoolMOS CE | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Type | Power MOSFET | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Pin Count | 3 +Tab | |
| Polarity | N | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 53 | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V | |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | |
| Rise Time | 4.9 ns | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Vgs (Max) | ±20V | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Channel Type | N | |
| FET Feature | - | |
| Product Category | MOSFET | |
| Width | 2.38 mm | |
| Height | 6.22 mm | |
| Length | 6.73 mm |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ