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IPU60R1K4C6 Технические параметры
Infineon IPU60R1K4C6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Package / Case | TO-251-3 | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO-251-3-341 | |
| Continuous Drain Current Id | 3.2 | |
| Vds - Drain-Source Breakdown Voltage | 600 V | |
| Typical Turn-On Delay Time | 8 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Pd - Power Dissipation | 28.4 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Unit Weight | 0.011993 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 1500 | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement | |
| Part # Aliases | SP000931530 IPU60R1K4C6BKMA1 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| Qg - Gate Charge | 9.4 nC | |
| Rds On - Drain-Source Resistance | 1.26 Ohms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 40 ns | |
| Id - Continuous Drain Current | 3.2 A | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 3.2A (Tc) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | Infineon Technologies | |
| Power Dissipation (Max) | 28.4W (Tc) | |
| Product Status | Active | |
| Series | XPU60R1 | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.1A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V | |
| Rise Time | 7 ns | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Vgs (Max) | ±20V | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Channel Type | N | |
| FET Feature | - | |
| Product Category | MOSFET | |
| Width | 2.38 mm | |
| Height | 6.22 mm | |
| Length | 6.73 mm |
IPU60R1K4C6 Документы
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