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IRF6215STRL Технические параметры
Infineon IRF6215STRL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Mounting Type | - | |
| Surface Mount | YES | |
| Shell Material | PBT | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Shell Sizes | - | |
| RoHS | Yes | |
| Package Description | PLASTIC, D2PAK-3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | IRF6215STRL | |
| Package Shape | RECTANGULAR | |
| Manufacturer | International Rectifier | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Risk Rank | 5.05 | |
| Drain Current-Max (ID) | 13 A | |
| Series | AMPMODU Mod IV | |
| JESD-609 Code | e0 | |
| Termination | - | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Gender | - | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| HTS Code | 8541.29.00.95 | |
| Subcategory | Other Transistors | |
| Pitch | n/a | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 225 | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| Contact Finish | - | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Note | - | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Number of Positions/Contacts | 8Positions/Contacts | |
| Drain Current-Max (Abs) (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| DS Breakdown Voltage-Min | 150 V | |
| Avalanche Energy Rating (Eas) | 310 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 110 W | |
| IP Rating | - |
IRF6215STRL Документы
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