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IRF6216TRPBF-1 Технические параметры
Infineon IRF6216TRPBF-1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Surface Mount | YES | |
| Supplier Device Package | SOT-223 | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Current - Continuous Drain (Id) @ 25℃ | 2.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | Infineon Technologies | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Product Status | Obsolete | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IRF6216TRPBF-1 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.29 | |
| Drain Current-Max (ID) | 2.2 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | HEXFET® | |
| ECCN Code | EAR99 | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G8 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.3A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | P-CHANNEL | |
| JEDEC-95 Code | MS-012AA | |
| Drain-source On Resistance-Max | 0.24 Ω | |
| DS Breakdown Voltage-Min | 150 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | - |
IRF6216TRPBF-1 Документы
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