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Infineon IRF7307QPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Package Description | LEAD FREE, SOP-8 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IRF7307QPBF | |
| Package Shape | RECTANGULAR | |
| Manufacturer | International Rectifier | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Risk Rank | 5.12 | |
| Part Package Code | SOIC | |
| Drain Current-Max (ID) | 5.2 A | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Resistance | 500 mΩ | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| HTS Code | 8541.29.00.95 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Subcategory | Other Transistors | |
| Max Power Dissipation | 2 W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2 W | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 4.3 A | |
| JEDEC-95 Code | MS-012AA | |
| Gate to Source Voltage (Vgs) | 12 V | |
| Drain Current-Max (Abs) (ID) | 5.2 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| Drain to Source Breakdown Voltage | -20 V | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Dual Supply Voltage | 20 V | |
| Input Capacitance | 610 pF | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 2 W | |
| Nominal Vgs | 700 mV | |
| Width | 3.9878 mm | |
| Height | 1.4986 mm | |
| Length | 4.9784 mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No |