Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IRF7341QPBF Технические параметры
Infineon IRF7341QPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | LEAD FREE, SOP-8 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IRF7341QPBF | |
| Package Shape | RECTANGULAR | |
| Manufacturer | International Rectifier | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Risk Rank | 5.1 | |
| Part Package Code | SOIC | |
| Drain Current-Max (ID) | 5.1 A | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| HTS Code | 8541.29.00.95 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | MS-012AA | |
| Drain Current-Max (Abs) (ID) | 5.1 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| DS Breakdown Voltage-Min | 55 V | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 2.4 W |
IRF7341QPBF Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ