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IRF7380TRPBF-1 Технические параметры

Infineon  IRF7380TRPBF-1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Infineon
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Process Technology HEXFET
Channel Mode Enhancement
Number of Elements per Chip 2Elements per Chips
Maximum Drain Source Voltage (V) 80
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 3.6
Maximum Gate Source Leakage Current (nA) 200
Maximum IDSS (uA) 20
Maximum Drain Source Resistance (MOhm) 73@10V
Typical Gate Charge @ Vgs (nC) 15@10V
Typical Gate Charge @ 10V (nC) 15
Typical Input Capacitance @ Vds (pF) 660@25V
Свойство продукта Значение свойства
Maximum Power Dissipation (mW) 2000
Typical Fall Time (ns) 17
Typical Rise Time (ns) 10
Typical Turn-Off Delay Time (ns) 41
Typical Turn-On Delay Time (ns) 9
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 1.5(Max)
Package Width 4(Max)
Package Length 5(Max)
PCB changed 8
Standard Package Name SOP
Supplier Package SOIC
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Pin Count 8
Configuration Dual Dual Drain
Channel Type N
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IRF7380TRPBF-1 Документы

  • Datasheets
IRF7380TRPBF-1 brand manufacturers: Infineon, Anli stock, IRF7380TRPBF-1 reference price.Infineon. IRF7380TRPBF-1 parameters, IRF7380TRPBF-1 Datasheet PDF and pin diagram description download.You can use the IRF7380TRPBF-1 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IRF7380TRPBF-1 pin diagram and circuit diagram and usage method of function,IRF7380TRPBF-1 electronics tutorials.You can download from the Anli.