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IRFF310 Технические параметры
Infineon IRFF310 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| RoHS | Non-Compliant | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | IRFF310 | |
| Package Shape | ROUND | |
| Manufacturer | Infineon Technologies AG | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.11 | |
| Drain Current-Max (ID) | 1.25 A | |
| JESD-609 Code | e0 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | AVALANCHE RATED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Subcategory | FET General Purpose Power | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 15 W | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 400 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 1.25 A | |
| JEDEC-95 Code | TO-205AF | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 1.25 A | |
| Drain-source On Resistance-Max | 4.15 Ω | |
| Drain to Source Breakdown Voltage | 400 V | |
| Pulsed Drain Current-Max (IDM) | 5.5 A | |
| DS Breakdown Voltage-Min | 400 V | |
| Avalanche Energy Rating (Eas) | 0.82 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 15 W | |
| Drain to Source Resistance | 3.6 Ω | |
| On-State Resistance | 30.6 Ω | |
| Radiation Hardening | No | |
| Lead Free | Contains Lead |
IRFF310 Документы
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