Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IRFF330 Технические параметры
Infineon IRFF330 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| RoHS | Non-Compliant | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | IRFF330 | |
| Package Shape | ROUND | |
| Manufacturer | Infineon Technologies AG | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.1 | |
| Drain Current-Max (ID) | 3 A | |
| JESD-609 Code | e0 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Subcategory | FET General Purpose Power | |
| Max Power Dissipation | 25 W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 25 W | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 400 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 3 A | |
| JEDEC-95 Code | TO-205AF | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 3 A | |
| Drain-source On Resistance-Max | 1.15 Ω | |
| Drain to Source Breakdown Voltage | 400 V | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| DS Breakdown Voltage-Min | 400 V | |
| Avalanche Energy Rating (Eas) | 0.51 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 25 W | |
| Drain to Source Resistance | 1 Ω | |
| Nominal Vgs | 4 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| Lead Free | Contains Lead |
IRFF330 Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ