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IRFR430APBF Технические параметры
Infineon IRFR430APBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 9 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 10 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IRFR430APBF | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Vishay Intertechnologies | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Samacsys Description | IRFR430APBF, N-channel MOSFET Transistor 5 A 500 V, 3-Pin D-PAK | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Risk Rank | 0.57 | |
| Part Package Code | TO-252AA | |
| Drain Current-Max (ID) | 5 A | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Subcategory | FET General Purpose Powers | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252AA | |
| Drain Current-Max (Abs) (ID) | 5 A | |
| Drain-source On Resistance-Max | 1.7 Ω | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| DS Breakdown Voltage-Min | 500 V | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 110 W |
IRFR430APBF Документы
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