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IRGP4069D-EPBF Технические параметры

Infineon  IRGP4069D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка Infineon
Mount Through Hole
Package / Case TO-247-3
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.85V
Number of Elements 1 Element
Power Dissipation (Max) 268W
JESD-609 Code e3
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSFM-T3
Свойство продукта Значение свойства
Rise Time-Max 42ns
Element Configuration Single
Power Dissipation 268W
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 76A
Reverse Recovery Time 120 ns
JEDEC-95 Code TO-247AD
Turn On Time 78 ns
Turn Off Time-Nom (toff) 188 ns
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 54ns
Radiation Hardening No
RoHS Status RoHS Compliant
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IRGP4069D-EPBF Документы

IRGP4069D-EPBF brand manufacturers: Infineon, Anli stock, IRGP4069D-EPBF reference price.Infineon. IRGP4069D-EPBF parameters, IRGP4069D-EPBF Datasheet PDF and pin diagram description download.You can use the IRGP4069D-EPBF Transistors - IGBTs - Single, DSP Datesheet PDF, find IRGP4069D-EPBF pin diagram and circuit diagram and usage method of function,IRGP4069D-EPBF electronics tutorials.You can download from the Anli.