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IRL2505LPBF Технические параметры
Infineon IRL2505LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | LEAD FREE, PLASTIC, TO-262, 3 PIN | |
| Package Style | IN-LINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IRL2505LPBF | |
| Package Shape | RECTANGULAR | |
| Manufacturer | International Rectifier | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Risk Rank | 8.39 | |
| Part Package Code | TO-262AA | |
| Drain Current-Max (ID) | 104 A | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | |
| HTS Code | 8541.29.00.95 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-262AA | |
| Drain Current-Max (Abs) (ID) | 104 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| DS Breakdown Voltage-Min | 55 V | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 200 W |
IRL2505LPBF Документы
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