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S80KS5123GABHM023 Технические параметры

Infineon  S80KS5123GABHM023 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка Infineon
Mounting Type Surface Mount
Package / Case 24-VBGA
Supplier Device Package 24-FBGA (6x8)
Voltage, Rating 15 V
Package Tape & Reel (TR)
Mfr Infineon Technologies
Product Status Active
Memory Types Volatile
Factory Pack QuantityFactory Pack Quantity 2500
Manufacturer Infineon
Brand Infineon Technologies
RoHS Details
Mounting Styles SMD/SMT
Operating Temperature -40°C ~ 125°C (TA)
Series HYPERRAM™
Packaging Reel
Tolerance 0.5 %
Свойство продукта Значение свойства
Temperature Coefficient 100 ppm/°C
Resistance 2.74 kΩ
Max Operating Temperature 125 °C
Min Operating Temperature -55 °C
Composition Thin Film
Subcategory Memory & Data Storage
Power Rating 50 mW
Technology PSRAM (Pseudo SRAM)
Voltage - Supply 1.7V ~ 2V
Memory Size 512Mbit
Clock Frequency 200 MHz
Access Time 35 ns
Memory Format PSRAM
Memory Interface SPI - Octal I/O
Write Cycle Time - Word, Page 35ns
Product Type DRAM
Product Category DRAM
Memory Organization 64M x 8
Height 260 µm

S80KS5123GABHM023 Документы

  • Datasheets
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