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SPA08N50C3 Технические параметры

Infineon  SPA08N50C3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Factory Lead Time 8 Weeks
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Number of Elements 1 Element
Power Dissipation (Max) 32W
Turn Off Delay Time 60 ns
Packaging Bulk
Published 2005
Pbfree Code yes
Part Status Discontinued
Number of Terminations 3Terminations
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED
Voltage - Rated DC 560V
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 7.6A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 32W
Case Connection ISOLATED
Turn On Delay Time 6 ns
Voltage - Threshold 3V
Transistor Application SWITCHING
Halogen Free Halogen Free
Rise Time 5ns
Drain to Source Voltage (Vdss) 560V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 7.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 560V
Pulsed Drain Current-Max (IDM) 22.8A
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 600mOhm
Rds On Max 600 mΩ
Capacitance - Input 750pF
Height 9.83mm
Length 10.65mm
Width 4.85mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

SPA08N50C3 Документы

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