Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon STK12C68-L35I technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Infineon | |
| Mounting Type | Through Hole | |
| Package / Case | Radial, Can | |
| Supplier Device Package | 28-LCC (13.97x8.89) | |
| Surface Mount Land Size | - | |
| Product Status | Obsolete | |
| Voltage Rated | 25 V | |
| Lifetime @ Temp. | 5000 Hrs @ 125°C | |
| Mfr | EPCOS - TDK Electronics | |
| Package | Bulk | |
| Base Product Number | STK12C68 | |
| Memory Types | Non-Volatile | |
| Series | B41605 | |
| Operating Temperature | -55°C ~ 125°C | |
| Size / Dimension | 0.866 Dia (22.00mm) | |
| Tolerance | ±20% |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Applications | Automotive | |
| Capacitance | 6800 µF | |
| Technology | NVSRAM (Non-Volatile SRAM) | |
| Voltage - Supply | 4.5V ~ 5.5V | |
| ESR (Equivalent Series Resistance) | 22mOhm @ 100Hz | |
| Lead Spacing | 0.331 (8.40mm) | |
| Memory Size | 64Kbit | |
| Polarization | Polar | |
| Ripple Current @ High Frequency | 6.5 A @ 10 kHz | |
| Access Time | 35 ns | |
| Memory Format | NVSRAM | |
| Memory Interface | Parallel | |
| Write Cycle Time - Word, Page | 35ns | |
| Memory Organization | 8K x 8 | |
| Height Seated (Max) | 1.654 (42.00mm) | |
| Ratings | - |