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2ED020I12-F Технические параметры
Infineon Technologies 2ED020I12-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | PMIC - Gate Drivers | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 20-SOIC (0.295, 7.50mm Width), 18 Leads | |
| Number of Pins | 18Pins | |
| Driver Configuration | Half-Bridge | |
| Packaging | Tape & Reel (TR) | |
| Published | 1999 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 18Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -40°C | |
| Voltage - Supply | 0V~18V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Functions | 2Functions | |
| Supply Voltage | 15V | |
| Base Part Number | 2ED020I12-F | |
| Qualification Status | Not Qualified | |
| Temperature Grade | INDUSTRIAL | |
| Input Type | Inverting | |
| Channel Type | Independent | |
| Number of Drivers | 2Drivers | |
| Output Peak Current Limit-Nom | 2A | |
| Gate Type | IGBT, N-Channel MOSFET | |
| Current - Peak Output (Source, Sink) | 1A 2A | |
| Built-in Protections | THERMAL; UNDER VOLTAGE | |
| High Side Voltage - Max (Bootstrap) | 1200V | |
| Output Current Flow Direction | SOURCE SINK | |
| Width | 7.6mm | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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