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2N7002H6327XTSA2 Технические параметры

Infineon Technologies  2N7002H6327XTSA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 300mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 500mW Ta
Turn Off Delay Time 5.5 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series OptiMOS™
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 60V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 115mA
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 10V
Rise Time 3.3ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 300mA
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 2.9mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2N7002H6327XTSA2 Документы

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