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AUIRF7303QTR Технические параметры

Infineon Technologies  AUIRF7303QTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 15 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2.4W
Terminal Form GULL WING
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Свойство продукта Значение свойства
Turn On Delay Time 2.9 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 515pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 6.2ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 7.8 ns
Continuous Drain Current (ID) 5.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.9A
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant

AUIRF7303QTR Документы

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