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Infineon Technologies AUIRF7313QTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 21 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2011 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 2.4W | |
| Terminal Form | GULL WING | |
| Reference Standard | AEC-Q101 | |
| Operating Mode | ENHANCEMENT MODE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 2.4W | |
| Turn On Delay Time | 3.7 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 29m Ω @ 6.9A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | |
| Rise Time | 7.3ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 11 ns | |
| Continuous Drain Current (ID) | 6.9A | |
| Threshold Voltage | 3V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 30V | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |