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AUIRF7342QTR Технические параметры

Infineon Technologies  AUIRF7342QTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 43 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, HEXFET®
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Max Power Dissipation 2W
Terminal Form GULL WING
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Свойство продукта Значение свойства
Turn On Delay Time 14 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 55V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 3.4A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.105Ohm
Drain to Source Breakdown Voltage -55V
Avalanche Energy Rating (Eas) 114 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

AUIRF7342QTR Документы

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