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AUIRFN8458TRXTMA1 Технические параметры

Infineon Technologies  AUIRFN8458TRXTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PQFN (5x6)
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Not For New Designs
Current - Continuous Drain (Id) @ 25℃ 43A (Tc)
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-On Delay Time 9.7 ns
Vgs th - Gate-Source Threshold Voltage 3.9 V
Pd - Power Dissipation 180 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 4000
Mounting Styles SMD/SMT
Forward Transconductance - Min 56 S
Part # Aliases AUIRFN8458TR SP001784378
Manufacturer Infineon
Brand Infineon Technologies
Свойство продукта Значение свойства
Qg - Gate Charge 22 nC
Rds On - Drain-Source Resistance 8 mOhms
Typical Turn-Off Delay Time 11 ns
Id - Continuous Drain Current 43 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Reel
Subcategory MOSFETs
Technology Si
Number of Channels 2 ChannelChannel
Power - Max 34W (Tc)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 10mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3.9V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 71 ns
Drain to Source Voltage (Vdss) 40V
Product Type MOSFET
Transistor Type 2 N-Channel
Channel Type Dual N
FET Feature Standard
Product Category MOSFET
Просмотр сходства
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