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AUIRG4PH50S Технические параметры

Infineon Technologies  AUIRG4PH50S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 9 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.7V
Number of Elements 1 Element
Test Conditions 960V, 33A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 200W
Element Configuration Single
Power Dissipation 200W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 57A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Turn Off Time-Nom (toff) 2170 ns
Gate Charge 167nC
Current - Collector Pulsed (Icm) 114A
Td (on/off) @ 25°C 32ns/845ns
Switching Energy 1.8mJ (on), 19.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

AUIRG4PH50S Документы

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