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AUIRGP35B60PD Технические параметры

Infineon Technologies  AUIRGP35B60PD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 390V, 22A, 3.3 Ω, 15V
Turn Off Delay Time 122 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGHER RELIABILITY
Max Power Dissipation 308W
Rise Time-Max 11ns
Element Configuration Single
Power Dissipation 308W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 34 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.55V
Max Collector Current 60A
JEDEC-95 Code TO-247AC
Turn On Time 34 ns
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 35A
Turn Off Time-Nom (toff) 142 ns
IGBT Type NPT
Gate Charge 160nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 26ns/110ns
Switching Energy 220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 16ns
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

AUIRGP35B60PD Документы

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