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AUIRGP4062D1-E Технические параметры
Infineon Technologies AUIRGP4062D1-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 17 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Test Conditions | 400V, 24A, 10 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2013 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 217W | |
| Rise Time-Max | 41ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 217W | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.77V | |
| Max Collector Current | 55A | |
| Reverse Recovery Time | 102 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.77V @ 15V, 24A | |
| IGBT Type | Trench | |
| Gate Charge | 77nC | |
| Current - Collector Pulsed (Icm) | 72A | |
| Td (on/off) @ 25°C | 19ns/90ns | |
| Switching Energy | 532μJ (on), 311μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| RoHS Status | ROHS3 Compliant |
AUIRGP4062D1-E Документы
- DatasheetsAUIRGP4062D1(-E)
- Other Related DocumentsPart Number Guide
- PCN PackagingPackage Drawing Update 19/Aug/2015
- ConflictMineralStatementInfineon-company-51.pdf
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