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AUIRGP4062D-E Технические параметры

Infineon Technologies  AUIRGP4062D-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.95V
Number of Elements 1 Element
Test Conditions 400V, 24A, 10 Ω, 15V
Turn Off Delay Time 104 ns
Operating Temperature -55°C~175°C TJ
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 250W
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Standard
Свойство продукта Значение свойства
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 48A
Reverse Recovery Time 89ns
JEDEC-95 Code TO-247AD
Turn On Time 64 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Turn Off Time-Nom (toff) 164 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 41ns
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

AUIRGP4062D-E Документы

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