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AUIRGPS4067D1 Технические параметры

Infineon Technologies  AUIRGPS4067D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.05V
Number of Elements 1 Element
Test Conditions 400V, 120A, 4.7 Ω, 15V
Turn Off Delay Time 198 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 750W
JESD-30 Code R-PSIP-T3
Rise Time-Max 82ns
Element Configuration Single
Power Dissipation 750W
Case Connection COLLECTOR
Свойство продукта Значение свойства
Input Type Standard
Turn On Delay Time 69 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.05V
Max Collector Current 240A
Reverse Recovery Time 360 ns
JEDEC-95 Code TO-274AA
Turn On Time 127 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 120A
Turn Off Time-Nom (toff) 281 ns
IGBT Type Trench
Gate Charge 360nC
Current - Collector Pulsed (Icm) 360A
Td (on/off) @ 25°C 69ns/198ns
Switching Energy 8.2mJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 48ns
Height 20.8mm
Length 16.1mm
Width 5.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

AUIRGPS4067D1 Документы

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