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BAR6402ELE6327XTMA1 Технические параметры

Infineon Technologies  BAR6402ELE6327XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case 0402 (1006 Metric)
Number of Elements 1 Element
Power Dissipation (Max) 250mW
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Base Part Number BAR6402
Свойство продукта Значение свойства
Max Current Rating 100mA
Element Configuration Single
Diode Type PIN - Single
Forward Current 100mA
Capacitance @ Vr, F 0.35pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 150V
Breakdown Voltage-Min 150V
Diode Capacitance-Nom 0.13pF
Resistance @ If, F 1.35Ohm @ 100mA 100MHz
Minority Carrier Lifetime-Nom 1.55 μs
Diode Res Test Current 1mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 20Ohm
RoHS Status ROHS3 Compliant
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BAR6402ELE6327XTMA1 Документы

BAR6402ELE6327XTMA1 brand manufacturers: Infineon Technologies, Anli stock, BAR6402ELE6327XTMA1 reference price.Infineon Technologies. BAR6402ELE6327XTMA1 parameters, BAR6402ELE6327XTMA1 Datasheet PDF and pin diagram description download.You can use the BAR6402ELE6327XTMA1 Diodes - RF, DSP Datesheet PDF, find BAR6402ELE6327XTMA1 pin diagram and circuit diagram and usage method of function,BAR6402ELE6327XTMA1 electronics tutorials.You can download from the Anli.