Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies BAR6405E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mount | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2002 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Applications | ATTENUATOR; SWITCHING | |
| Voltage - Rated DC | 150V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Current Rating | 100mA | |
| Base Part Number | BAR64-05 | |
| Reference Standard | AEC-Q101 | |
| Element Configuration | Dual | |
| Diode Type | PIN - 1 Pair Common Cathode | |
| Power Dissipation | 250mW | |
| Forward Current | 100mA | |
| Forward Voltage | 1.1V | |
| Reverse Recovery Time | 1.55 μs | |
| Capacitance @ Vr, F | 0.35pF @ 20V 1MHz | |
| Reverse Voltage | 150V | |
| Frequency Band | C B | |
| Resistance @ If, F | 1.35Ohm @ 100mA 100MHz | |
| Minority Carrier Lifetime-Nom | 1.55 µs | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |