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Infineon Technologies BAR8902LRHE6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Package / Case | SOD-882 | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 250mW | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e4 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Gold (Au) | |
| Applications | SWITCHING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | LOW DISTORTION | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-XBCC-N2 | |
| Diode Type | PIN - Single | |
| Capacitance @ Vr, F | 0.35pF @ 1V 1MHz | |
| Voltage - Peak Reverse (Max) | 80V | |
| Breakdown Voltage-Min | 80V | |
| Frequency Band | L B | |
| Resistance @ If, F | 1.5Ohm @ 10mA 100MHz | |
| Diode Capacitance-Max | 0.35pF | |
| Minority Carrier Lifetime-Nom | 0.8 μs | |
| RoHS Status | RoHS Compliant |