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BAS7004E6327HTSA1 Технические параметры

Infineon Technologies  BAS7004E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 0.25W
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Capacitance 1.5pF
Terminal Form GULL WING
Base Part Number BAS70-04
Reference Standard AEC-Q101
Voltage 70V
Element Configuration Dual
Свойство продукта Значение свойства
Speed Small Signal =< 200mA (Io), Any Speed
Current 1A
Diode Type Schottky
Current - Reverse Leakage @ Vr 100nA @ 50V
Voltage - Forward (Vf) (Max) @ If 1V @ 15mA
Forward Current 70mA
Max Reverse Leakage Current 100nA
Operating Temperature - Junction 150°C Max
Max Surge Current 100mA
Current - Average Rectified (Io) 70mA DC
Forward Voltage 700mV
Max Reverse Voltage (DC) 410mV
Average Rectified Current 70mA
Reverse Recovery Time 100 ps
Peak Reverse Current 100nA
Max Repetitive Reverse Voltage (Vrrm) 70V
Peak Non-Repetitive Surge Current 100mA
Reverse Voltage 70V
Diode Configuration 1 Pair Series Connection
Max Forward Surge Current (Ifsm) 100mA
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
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BAS7004E6327HTSA1 Документы

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