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- BAT15099E6433HTMA1
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BAT15099E6433HTMA1 Технические параметры
Infineon Technologies BAT15099E6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Package / Case | TO-253-4, TO-253AA | |
| Number of Pins | 4Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Power Dissipation (Max) | 100mW | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 4V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Current Rating | 110mA | |
| Base Part Number | BAT15-099 | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Max Current Rating | 110mA | |
| Diode Type | Schottky - 2 Independent | |
| Case Connection | CATHODE | |
| Forward Current | 110mA | |
| Forward Voltage | 410mV | |
| Max Repetitive Reverse Voltage (Vrrm) | 4V | |
| Capacitance @ Vr, F | 0.35pF @ 0V 1MHz | |
| Frequency Band | X B | |
| Diode Capacitance-Max | 0.35pF | |
| Type of Schottky Barrier | LOW BARRIER | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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