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Infineon Technologies BAT62E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Diodes - RF | |
Марка | ||
Factory Lead Time | 4 Weeks | |
Mount | Surface Mount | |
Package / Case | TO-253-4, TO-253AA | |
Number of Pins | 4Pins | |
Diode Element Material | SILICON | |
Number of Elements | 2 Elements | |
Power Dissipation (Max) | 100mW | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2010 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 4Terminations | |
ECCN Code | EAR99 | |
Voltage - Rated DC | 40V | |
Terminal Form | GULL WING |
Свойство продукта | Значение свойства | |
---|---|---|
Current Rating | 20mA | |
Base Part Number | BAT62 | |
Max Current Rating | 20mA | |
Element Configuration | Dual | |
Diode Type | Schottky - 2 Independent | |
Forward Current | 20mA | |
Halogen Free | Not Halogen Free | |
Forward Voltage | 1V | |
Peak Reverse Current | 10μA | |
Max Repetitive Reverse Voltage (Vrrm) | 40V | |
Capacitance @ Vr, F | 0.6pF @ 0V 1MHz | |
Diode Capacitance-Max | 0.6pF | |
Type of Schottky Barrier | LOW BARRIER | |
Height | 1mm | |
Length | 2.9mm | |
Width | 1.3mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |