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BAT62E6327HTSA1 Технические параметры

Infineon Technologies  BAT62E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 100mW
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Voltage - Rated DC 40V
Terminal Form GULL WING
Свойство продукта Значение свойства
Current Rating 20mA
Base Part Number BAT62
Max Current Rating 20mA
Element Configuration Dual
Diode Type Schottky - 2 Independent
Forward Current 20mA
Halogen Free Not Halogen Free
Forward Voltage 1V
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 40V
Capacitance @ Vr, F 0.6pF @ 0V 1MHz
Diode Capacitance-Max 0.6pF
Type of Schottky Barrier LOW BARRIER
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
BAT62E6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BAT62E6327HTSA1 reference price.Infineon Technologies. BAT62E6327HTSA1 parameters, BAT62E6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BAT62E6327HTSA1 Diodes - RF, DSP Datesheet PDF, find BAT62E6327HTSA1 pin diagram and circuit diagram and usage method of function,BAT62E6327HTSA1 electronics tutorials.You can download from the Anli.