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BAT6302VH6327XTSA1 Технические параметры

Infineon Technologies  BAT6302VH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case SC-79, SOD-523
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 100mW
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Additional Feature HIGH SPEED
HTS Code 8541.10.00.60
Terminal Position DUAL
Terminal Form FLAT
Max Current Rating 100mA
Element Configuration Single
Diode Type Schottky - Single
Forward Current 100mA
Halogen Free Halogen Free
Forward Voltage 190mV
Max Repetitive Reverse Voltage (Vrrm) 3V
Capacitance @ Vr, F 0.85pF @ 0.2V 1MHz
Diode Capacitance-Max 0.85pF
Type of Schottky Barrier LOW BARRIER
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAT6302VH6327XTSA1 Документы

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