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Infineon Technologies BAT6402VH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-79, SOD-523 | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 0.25W | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-F2 | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 2μA @ 30V | |
| Voltage - Forward (Vf) (Max) @ If | 750mV @ 100mA | |
| Forward Current | 250mA | |
| Operating Temperature - Junction | 150°C Max | |
| Output Current-Max | 0.12A | |
| Halogen Free | Halogen Free | |
| Current - Average Rectified (Io) | 250mA DC | |
| Max Reverse Voltage (DC) | 40V | |
| Average Rectified Current | 250mA | |
| Reverse Recovery Time | 5 ns | |
| Max Repetitive Reverse Voltage (Vrrm) | 40V | |
| Capacitance @ Vr, F | 6pF @ 0V 1MHz | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |