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BAT68E6327HTSA1 Технические параметры

Infineon Technologies  BAT68E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 150mW
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.60
Voltage - Rated DC 8V
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 130mA
Base Part Number BAT68
Polarity Standard
Voltage 8V
Element Configuration Single
Current 13A
Diode Type Schottky - Single
Output Current 130mA
Forward Current 130mA
Forward Voltage 318mV
Max Repetitive Reverse Voltage (Vrrm) 8V
Capacitance @ Vr, F 1pF @ 0V 1MHz
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Resistance @ If, F 10Ohm @ 5mA 10kHz
Diode Capacitance-Max 1pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAT68E6327HTSA1 Документы

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