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BAV70E6767 Технические параметры
Infineon Technologies BAV70E6767 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 3Terminals | |
| Mfr | Infineon Technologies | |
| Package | Bulk | |
| Product Status | Active | |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) | |
| RoHS | Non-Compliant | |
| Package Description | SOT-23, 3 PIN | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BAV70E6767 | |
| Power Dissipation (Max) | 0.25 W | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.55 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | Automotive, AEC-Q101 | |
| Max Operating Temperature | 150 °C | |
| Capacitance | 1.5 pF | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | COMMON CATHODE, 2 ELEMENTS | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 150 nA @ 70 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA | |
| Forward Current | 200 mA | |
| Operating Temperature - Junction | 150°C | |
| Output Current-Max | 0.2 A | |
| Voltage - DC Reverse (Vr) (Max) | 80 V | |
| Peak Reverse Current | 50 µA | |
| Rep Pk Reverse Voltage-Max | 80 V | |
| Reverse Voltage | 80 V | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 4.5 A | |
| Max Junction Temperature (Tj) | 150 °C | |
| Reverse Recovery Time-Max | 0.004 µs | |
| Reverse Recovery Time (trr) | 4 ns | |
| Height | 1.1 mm |
BAV70E6767 Документы
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