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BAV70WH6327XTSA1 Технические параметры

Infineon Technologies  BAV70WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 0.25W
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Power Rating 200mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BAV70W
Pin Count 3
Свойство продукта Значение свойства
Reference Standard AEC-Q101
Element Configuration Common Cathode
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 150nA @ 70V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 200mA
Operating Temperature - Junction 150°C Max
Output Current-Max 0.2A
Halogen Free Halogen Free
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 80V
Average Rectified Current 200mA
Reverse Recovery Time 4 ns
Peak Reverse Current 50μA
Max Repetitive Reverse Voltage (Vrrm) 85V
Peak Non-Repetitive Surge Current 4.5A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 4.5A
Height 800μm
Length 2mm
Width 1.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAV70WH6327XTSA1 Документы

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