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BAW56E6327 Технические параметры

Infineon Technologies  BAW56E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Capacitance 2pF
Voltage - Rated DC 70V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAW56
Pin Count 3
Qualification Status Not Qualified
Voltage 85V
Element Configuration Common Anode
Speed Small Signal =< 200mA (Io), Any Speed
Current 2A
Diode Type Standard
Current - Reverse Leakage @ Vr 150nA @ 70V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Max Reverse Leakage Current 150nA
Operating Temperature - Junction 150°C Max
Max Surge Current 4.5A
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 80V
Average Rectified Current 200mA
Reverse Recovery Time 4 ns
Peak Non-Repetitive Surge Current 4.5A
Diode Configuration 1 Pair Common Anode
Recovery Time 4 ns
RoHS Status RoHS Compliant
Lead Free Contains Lead

BAW56E6327 Документы

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