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BAW56WE6327HTSA1 Технические параметры

Infineon Technologies  BAW56WE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 0.25W
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAW56W
Pin Count 3
Qualification Status Not Qualified
Element Configuration Common Anode
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 150nA @ 70V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 200mA
Operating Temperature - Junction 150°C Max
Output Current-Max 0.2A
Current - Average Rectified (Io) 200mA DC
Max Reverse Voltage (DC) 80V
Average Rectified Current 200mA
Reverse Recovery Time 4 ns
Max Repetitive Reverse Voltage (Vrrm) 80V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
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BAW56WE6327HTSA1 Документы

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