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BAW56WE6433 Технические параметры

Infineon Technologies  BAW56WE6433 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Supplier Device Package PG-SOT323-3
Diode Element Material SILICON
Number of Terminals 3Terminals
Mfr Infineon Technologies
Package Bulk
Product Status Active
Current - Average Rectified (Io) (per Diode) 200mA (DC)
Base Product Number BAW56W
Package Description R-PDSO-G3
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Manufacturer Part Number BAW56WE6433
Power Dissipation (Max) 0.25 W
Package Shape RECTANGULAR
Manufacturer Rochester Electronics LLC
Number of Elements 2 Elements
Свойство продукта Значение свойства
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS INC
Risk Rank 5.58
Series -
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Configuration COMMON ANODE, 2 ELEMENTS
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 150 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Operating Temperature - Junction 150°C
Output Current-Max 0.2 A
Voltage - DC Reverse (Vr) (Max) 80 V
Diode Configuration 1 Pair Common Anode
Reverse Recovery Time-Max 0.006 µs
Reverse Recovery Time (trr) 4 ns

BAW56WE6433 Документы

  • Datasheets
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