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BC807UE6327HTSA1 Технические параметры

Infineon Technologies  BC807UE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -45V
Max Power Dissipation 330mW
Terminal Form GULL WING
Current Rating -500mA
Свойство продукта Значение свойства
Frequency 200MHz
Base Part Number BC807U
Polarity PNP
Power Dissipation 330mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 200MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC807UE6327HTSA1 Документы

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