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BC850BWH6327XTSA1 Технические параметры

Infineon Technologies  BC850BWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 250MHz
Свойство продукта Значение свойства
Base Part Number BC850
Element Configuration Single
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BC850BWH6327XTSA1 Документы

BC850BWH6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BC850BWH6327XTSA1 reference price.Infineon Technologies. BC850BWH6327XTSA1 parameters, BC850BWH6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BC850BWH6327XTSA1 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC850BWH6327XTSA1 pin diagram and circuit diagram and usage method of function,BC850BWH6327XTSA1 electronics tutorials.You can download from the Anli.